products > SKY VACUUM > CVD System
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PECVD 300
Number:
Category: CVD System |
Application
The device uses a plasma enhanced chemical vapor deposition techniques, the deposition of silicon nitride material on different substrates of optical glass, silicon, quartz and stainless steel, a thin film of amorphous silicon and microcrystalline silicon for the preparation of amorphous and microcrystalline silicon thin film solar cell devices. It can be widely used in universities, research institutes and small batch preparation of thin film materials.
Structure
Vacuum reaction chamber, cover components, hot wire frame, substrate heating station, gas path, extraction system, installation of the machine, vacuum measurement and electronic control system and other parts.
Technical spcification
model
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PECVD-300
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vacuum chamber
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vacuum chamber size : about §¶300mm x300mm£¨H£©
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vacuum system configuration
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molecular pump¡¢mechanical pump¡¢roots pump¡¢valve
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ultimate pressure
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¡Ü6.67x10-5 Pa£¨after baking£©
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Vacuum recovery time
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40mins up to 6.6x10-4 Pa£¨System extraction from the atmosphere£©
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cover components
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Inlet gas plate size: 120 mm ¦µ, the air flow evenly into the reaction chamber; Coupling electrode in structure; Inside and outside the shield to avoid interference with other equipment
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heat guide frame component
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35V£¬20A Tungsten filament heating: 4 ; Filament surface maximum temperature: 2000 ¡ã C; Hot wire and the substrate can be adjusted between 10 ~ 20 mm; Hot wire can add dc power supply: 35V, 20A
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preparation room turntable
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sample size
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¦µ100mm
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height setting
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Substrate and gaseous disks can adjust between 20 ~ 80 mm
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heat
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the highest temperature substrate heated 800¡æ¡À1¡æ
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bias voltage
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Substrate negative bias -200V
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gas path system
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Mass flow controller: 4 path; 500 SCCM, 200 SCCM, 100 SCCM, 50 SCCM: 1 path; Manual globe valve:6; Pneumatic globe valve: 6; Manual control flow meter: 5 L/min; DG16 deflation valve, pipe, joints etc.: 1 path
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water-cooling system
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cooling-water machine£¬cooling capacity 1.5kw
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