型号 Model
|
MBE400
|
主真空室
Primary vacuum chamber
|
约Ф400mm×600mm(H),筒形结构
AboutФ400mm×600mm(H), cylindrical structure
|
真空系统配置
Vacuum system feature
|
主真空室
Primary vacuum chamber
|
机械泵、分子泵、阀门
Mechanical pump, molecular pump, valve
|
极限压力
Ultimate presseure
|
主真空室
Primary vacuum chamber
|
≤5.0x10-8Pa(经烘烤除气后)
≤5.0x10-8Pa (after baking and degassing)
|
进样室
Loading chamber
|
≤6.67x10-5Pa(经烘烤除气后)
≤6.67x10-5Pa (after baking and degassing)
|
恢复真空时间
Time required to reacquire vacuum
|
主真空室
Primary vacuum chamber
|
35分钟可达到6.6x10-4 Pa(系统短时间暴露大气并充干燥氮气开始抽气)
6.6x10-4 Pa in 35 mins (pumping after short exposure to air and filled with helium)
|
进样室
Loading chamber
|
35分钟可达到6.6x10-4 Pa(系统短时间暴露大气并充干燥氮气开始抽气)
6.6x10-4 Pa in 35 mins (pumping after short exposure to air and filled with helium)
|
磁力传递送样机构
Magnetic sample deliver device
|
用于样品交接
For sample transfer
|
样品库
Sample storage
|
样品存放
Sample storage
|
氧等离子体发生器及电源
Oxygen plasma generator and power
|
CF16高压电极产生氧离子体
CF16 high voltage electrode produces oxygen plasma
|
束源炉组件
Beam source furnace unit
|
束源炉采用带水冷结构,源炉加热温度1300度,控温精度±1度,控温器采用日本进口。
Water cooling structure, heating temperature: 1300℃, temperature control precision ±1℃, Japanese temperature controller.
|
基片加热台
Substrate heating table
|
样品尺寸
Sample size
|
Ф50
|
运动方式
Mode of motion
|
基片可连续回转,转速5~30转/分
Substrate rotates continuously, rotation speed:5-30 rpm
|
加热
Heating
|
基片加热最高温度600℃±1℃
Max substrate heating temperature 600℃±1℃
|
气路系统
Gas circuit
|
质量流量控制器2路
2-circuit mass flow controller
|
设备占地面积
Space occupied
|
主机
Main unit
|
1300×850mm2
|
电控柜
Electric cabinet
|
700×700mm2(一个)(One)
|